Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy

摘要

We report the growth and characterization of a new dilute nitride infrared material: InN(As)Sb. InNAsSb single quantum wells (SQWs) and InNSb self-assembled quantum dots (QDs) were grown on both InAs and GaAs substrates by solid-source molecular beam epitaxy. High-quality InNAsSb epilayers were realized by optimizing the nitrogen incorporation growth conditions. Both secondary-ion mass spectroscopy and x-ray diffraction measurements confirmed a nitrogen incorporation of 1percent. Temperature- and power-dependent photoluminescence measurements were conducted and revealed a luminescence emission at 4.03 (mu)m from localized states and approx4.3 (mu)m from the ground-state transition in InNAsSb SQWs. InNSb QDs exhibited a 10 K photoluminescence peak at 3.6 (mu)m.