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Diffusion of Gold and Native Defects in Mercury Cadmium Telluride

机译:碲化镉镉中金和自然缺陷的扩散

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The diffusion of defects is of great importance in nanoscale device fabrication, making it essential to understand theoretically the microscopic mechanisms governing how native and dopant defects diffuse. To gain this insight, we have performed, for the first time, ab initio density functional calculations to determine the diffusion barriers for multiple pathways of Au impurities and native species in mercury cadmium telluride (MCT). We consider interstitial and vacancy-mediated diffusion mechanisms and calculate the corresponding activation energies using ab initio pseudopotential total energy calculations. Depending on the stoichiometry, the activation energies for Hg self-diffusion are calculated to range from 1.35 eV to 1.60 eV (interstitial mechanism) and from 1.60 eV to 1.85 eV (vacancy mechanism). These theoretical values suggest that Hg self-diffusion is predominantly interstitial mediated, and are in good agreement with existing experimental estimates, which suggest possible activation energies ranging from 1.05 eV to 1.75 eV. For Te self-diffusion via the interstitial mechanism, the calculated activation energy ranging from 2.35 eV to 2.60 eV is also in good agreement with the experimental estimates near 2.30 eV. For Au impurities, whether they are incorporated into the interstitial or Hg site, we find the interstitial mediated mechanism to be the dominant one. Our calculated barrier of 0.35 eV for Au interstitials is also in good agreement with the experimental estimate of 0.45 eV.
机译:缺陷的扩散在纳米级器件制造中非常重要,因此必须从理论上理解控制自然和掺杂缺陷扩散方式的微观机制。为了获得这种见解,我们首次进行了从头算密度函数计算,以确定碲化汞镉(MCT)中金杂质和天然物种的多种途径的扩散障碍。我们考虑间隙和空位介导的扩散机制,并使用从头算假电位的总能量计算来计算相应的活化能。根据化学计量,Hg自扩散的活化能的计算范围为1.35 eV至1.60 eV(间隙机制)和1.60 eV至1.85 eV(空位机制)。这些理论值表明,汞的自我扩散主要是由间隙介导的,并且与现有的实验估计非常吻合,后者表明可能的活化能范围为1.05 eV至1.75 eV。对于通过间隙机制的Te自扩散,计算得出的活化能范围为2.35 eV至2.60 eV,也与实验估计值接近2.30 eV很好。对于Au杂质,无论是将其掺入到间隙位置还是Hg位置,我们都发现间隙介导的机理是主要的机理。我们计算得出的Au间隙的0.35 eV势垒也与0.45 eV的实验估计值非常吻合。

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