Ion Beam Synthesis of Low Resistivity Contacts in Amorphous Silicon-Based Materials

摘要

Low resistivity layers have been formed at low process temperatures, by hgih dose Co~+ ion implantation in to hydrogenated amorphous silicon (a-Si:H) and amorphous silicon carbide (a-SiC:H). The lowest resistivities, of the order of 10 ohms/Sq, has been observed frot he carobn-free films (a-Si:H) and can be obtained at annealing temperatures of <250 deg C. Schottky barrier contacts to the a-Si:H films exhibit near ideal behavior with low leakage currents, of the order 10~(-9) A.cm~(-2). The electrical properties of the amorphous films are assessed as a function of ion dose, dose rate and annealing conditions, with a view to optimizing these parameters.