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首页> 外文期刊>Journal of Electronic Materials >Characterization of the Microstructure of an AlN-Mullite-Al2O3 Ceramic Layer on WCu Composite Alloy for Microelectronic Application
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Characterization of the Microstructure of an AlN-Mullite-Al2O3 Ceramic Layer on WCu Composite Alloy for Microelectronic Application

机译:用于微电子应用的WCu复合合金上的AlN-莫来石-Al2O3陶瓷层的微观结构表征

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摘要

An AlN composite ceramic layer was designed and fabricated on WCu substrates by hydrolysis-assisted solidification and firing. First, the surface of WCu substrates were pre-coated with polycarbosilane/AlN ceramic layers by spinning; the layers were then fabricated by firing. The phase composition, microstructure, and element distribution of the ceramic layer and interfacial reaction layer were investigated by use of scanning electron microscopy, energy-dispersive spectroscopy and x-ray diffraction. The results showed that the ceramic layers were composed of AlN, mullite, and Al2O3. There were many nanocrystalline rods on the surface of the ceramic layers. The Cr layer prevented the WCu substrate from reacting with water vapor during firing, and the Ni layer prevented diffusion of tungsten into the Cr layer. Study of the cross section of the ceramic layer fired on the Cr/Ni/WCu substrate revealed a perfect interfacial reaction layer.
机译:通过水解辅助固化和焙烧在WCu基体上设计并制备了AlN复合陶瓷层。首先,通过旋涂在WCu基板表面预涂聚碳硅烷/ AlN陶瓷层;然后通过焙烧来制造层。通过扫描电子显微镜,能谱和X射线衍射研究了陶瓷层和界面反应层的相组成,微观结构和元素分布。结果表明,陶瓷层由AlN,莫来石和Al2O3组成。陶瓷层的表面上有许多纳米晶棒。 Cr层可防止WCu衬底在烧结过程中与水蒸气反应,而Ni层可防止钨扩散到Cr层中。对在Cr / Ni / WCu衬底上烧制的陶瓷层的横截面的研究揭示了理想的界面反应层。

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