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首页> 外文期刊>Journal of Electronic Materials >Influence of Substrate Temperature on the Properties of Nanostructured ZnO Thin Films Grown by RF Magnetron Sputtering
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Influence of Substrate Temperature on the Properties of Nanostructured ZnO Thin Films Grown by RF Magnetron Sputtering

机译:衬底温度对射频磁控溅射纳米结构ZnO薄膜性能的影响

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Transparent conducting thin films of ZnO:Ga (GZO) have been deposited onto glass substrates and were prepared by RF-magnetron sputtering from nanoparticles synthesized by the sol-gel method. The preheated substrate temperature was changed from room temperature to 300A degrees C. X-ray diffraction spectra showed that the as-deposited films are polycrystalline ZnO with a hexagonal wurtzite structure. Surface morphology, optical properties (such as transmission, reflectance), and conductivity were investigated. The obtained results revealed that the structures and properties of the films were greatly affected by the substrate temperature. Thin films of GZO have a low resistivity, with a minimum value of 2.20 x 10(-3) Omega cm deposited at a substrate temperature of 200A degrees C.
机译:ZnO:Ga(GZO)的透明导电薄膜已沉积在玻璃基板上,并通过RF-磁控溅射从溶胶-凝胶法合成的纳米粒子制备。将预热的基板温度从室温改变为300℃。X射线衍射光谱表明,所沉积的膜是具有六方纤锌矿结构的多晶ZnO。研究了表面形态,光学性质(如透射率,反射率)和电导率。所得结果表明,膜的结构和性能受基材温度的影响很大。 GZO薄膜的电阻率低,在200A的基板温度下沉积的最小值为2.20 x 10(-3)Ωcm。

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