The Influence of Pd-Doped Au Wire Bonding on HAZ Microstructure and Looping Profile in Micro-Electromechanical Systems (MEMS) Packaging

摘要

Wire bonding processes has been widely adopted in micro-electromechanical systems (MEMS) packaging especially in biomedical devices for the integration of components. In the first process sequence in wire bonding, the zone along the wire near the melted tips is called the heat-affected zone (HAZ). The HAZ plays an important factor that influenced the looping profiles of wire bonding process. This paper investigates the effect of dopants on microstructures in the HAZ. One precent palladium (Pd) was added to the as-drawn 4N gold wire and annealed at 600A degrees C. The addition of Pd was able to moderate the grain growth in the HAZ by retarding the heat propagation to the wire. In the formation of the looping profile, the first bending point of the looping is highly associated with the length of the HAZ. The alloyed gold wire (2N gold) has a sharp angle at a distance of about 30 m from the neck of the wire with a measured bending radius of about 40 mm and bending angle of about 40A degrees clockwise from vertical axis, while the 4N gold wire bends at a longer distance. It also shows that the HAZ for 4N gold is longer than 2N gold wire.