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Thickness Dependence Study of Electron Beam Evaporated LBMO Manganite Thin Films for Bolometer Applications

机译:电子束蒸发LBMO锰薄膜在厚度计应用中的厚度依赖性研究

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摘要

La_(0.7)Ba_(0.3)MnO_3 (LBMO) thin films with different thicknesses were deposited on Si substrates using an electron beam evaporation technique for bolometer applications. To evaluate the influence of the thickness on their structural, compositional, morphological, and electrical properties, the LBMO thin films were characterized by x-ray diffraction (XRD), energy-dispersive spectroscopy, atomic force microscopy, and a four-probe method. XRD measurements showed that the crystal quality of the LBMO films improved with increasing thickness. The surface morphology revealed that the grain size and surface roughness of the films increased with increasing thickness. The resistivity increased with increasing thickness of the film. The temperature coefficient of resistance of the LBMO films decreased from 5.15%/K to 4.12%/K with increase of the film thickness from 20 nm to 100 nm.
机译:使用辐射计的电子束蒸发技术,将不同厚度的La_(0.7)Ba_(0.3)MnO_3(LBMO)薄膜沉积在Si衬底上。为了评估厚度对其结构,组成,形态和电性能的影响,通过X射线衍射(XRD),能量色散光谱,原子力显微镜和四探针法对LBMO薄膜进行了表征。 XRD测量表明,LBMO膜的晶体质量随着厚度的增加而改善。表面形态表明,膜的晶粒尺寸和表面粗糙度随着厚度的增加而增加。电阻率随着膜厚度的增加而增加。随着膜厚度从20nm增加到100nm,LBMO膜的电阻温度系数从5.15%/ K降低到4.12%/ K。

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