Microscopic Defects on MBE Grown LWIR Hg_(1-x)Cd_xTe Material and their Impact on Device Performance

WIJEWARNASURIYA P.S.; ZANDIAN M.; YOUNG D.B.

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Microscopic Defects on MBE Grown LWIR Hg_(1-x)Cd_xTe Material and their Impact on Device Performance

机译：MBE生长的LWIR Hg_（1-x）Cd_xTe材料的微观缺陷及其对器件性能的影响

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来源
《Journal of Electronic Materials》 |1999年第6期|共5页
作者
WIJEWARNASURIYA P.S.; ZANDIAN M.; YOUNG D.B.;
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原文格式 PDF
正文语种 eng
中图分类材料;
关键词
Etch pits; HgCdTe; infrared detectors; molecular beam epitaxy(MBE); void defects; micro-void defects; zero bias resistance;

机译：刻蚀坑;HgCdTe;红外探测器;分子束外延（MBE）;空洞缺陷;微孔洞缺陷;零偏电阻;

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专利

1. Microscopic Defects on MBE Grown LWIR Hg_(1-x)Cd_xTe Material and their Impact on Device Performance [J] . WIJEWARNASURIYA P.S., ZANDIAN M., YOUNG D.B. Journal of Electronic Materials . 1999,第6期

机译：MBE生长的LWIR Hg_（1-x）Cd_xTe材料的微观缺陷及其对器件性能的影响
2. Excess Low Frequency Noise/1-V Studies in p-on-n MBE LWIR Hg_(1-x)Cd_xTe Detectors [J] . DSOUZA A.I., WIJEWARNASURIYA P.S., DEWAMES R.E. Journal of Electronic Materials . 1999,第6期

机译：p-on-n MBE LWIR Hg_（1-x）Cd_xTe检测器中的过多低频噪声/ 1-V研究
3. Arsenic Incorporation in MBE Grown Hg_(1-x)Cd_xTe [J] . GREIN C.H., GARLAND J.W., SIVANANTHAN S. Journal of Electronic Materials . 1999,第6期

机译：MBE生长的Hg_（1-x）Cd_xTe中的砷掺入
4. Performance of small-pitched Hg_(1-x)Cd_xTe photoconductors based on MBE-grown multi-layer structures [C] . Galina V. Chekanova, Albina A. Drugova, Sergey A. Dvoretski, Electro-Optical and Infrared Systems: Technology and Applications . 2004

机译：基于MBE生长的多层结构的小间距Hg_（1-x）Cd_xTe光电导体的性能
5. MBE-grown wide bandgap II-VI materials for novel devices based on intersubband transitions. [D] . Lu, Hong. 2007

机译：MBE生长的宽带隙II-VI材料用于基于子带间过渡的新型设备。
6. Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE [O] . Riaz H Mari, Muhammad Shafi, Mohsin Aziz, 2011

机译：MBE在（100）和（311）A GaAs衬底上生长的Be掺杂AlGaAs中深层缺陷的电学表征
7. SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE [O] . Laiq Hussain, Håkan Pettersson, Qin Wang, 2018

机译：通过使用MBE在GaAs基材上生长的基于SB的癫痫发光的Swir-LWIR光致发光
8. Investigation of Anomalous n-Type Behavior in LWIR MBE-Grown Hg(1-x) Cd(x)Te Using Secondary Ion Mass Spectrometry (SIMS) [R] . Boyd, P. R. , Lee, U. , Almeida, L. A. , 2001

机译：使用二次离子质谱（sIms）研究LWIR mBE生长的Hg（1-x）Cd（x）Te中的异常n型行为

Microscopic Defects on MBE Grown LWIR Hg_(1-x)Cd_xTe Material and their Impact on Device Performance

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