Cleaning and reflow of Pb-Sn C4 solder bumps

摘要

The Pb/Sn electroplating process for C4 technology requires the ability to etch Ball Limiting Metallurgy (BLM) in the presence of the Pb/Sn bumps. Upon etching, a surface corrosion layer is formed and an appropriate cleaning acid must be used toremove this layer prior to solder reflow of the bumps. It was found that the morphology of the surface layer formed upon etching on the Pb/Sn solder bumps is critically dependent on the concentration of the etchant. Using a gravimetric test, XPS and AESanalysis, PbO containing small amounts of Sn and S, was identified to be the primary component of the surface. The thickness morphology, composition and the growth rate of the layer are critically dependent on the sulfur from the etchant InH{sub}2O{sub}2-rich solutions, the surface appears to be loosely packed and the growth rate on the surface of the bump was found to be reaction-rate limited; whereas, in H{sub}2SO{sub}4-rich solutions, the diffusion rate is the controlling step in forming the surface layer on the solder bumps, thus producing a thin and dense layer.