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A Built-in Self-Test Scheme for Memory Interfaces Timing Test and Measurement

机译:用于存储器接口时序测试和测量的内置自测方案

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This paper presents a Built-in Self-Test (BIST) technique to test the setup and hold times of memory interface circuitry. The BIST scheme generates data and clock using an on-chip pattern generator. The relative timing difference between data and clock is controlled using a cycle-by-cycle control method for testing. Two test methods of static and dynamic modes have been presented to measure the timing difference and then are used to specify the setup and hold times. The static mode is mainly used to detect pass or fail for timing specifications, and the dynamic mode is devised to measure the amount of timing mismatches and thus detect timing margin degradations due to the timing delay mismatches. Using these two test modes, the BIST scheme obtains test results with low frequency signals, which are compatible with low performance testers. The test chip including the BIST scheme has been fabricated with a commercial 0.18-μm CMOS process. The chip measurement results are shown to validate the testability of the BIST scheme for the setup and hold times of memory devices.
机译:本文提出了一种内置自检(BIST)技术,以测试存储器接口电路的建立和保持时间。 BIST方案使用片上模式生成器生成数据和时钟。数据和时钟之间的相对时序差异是使用逐周期控制方法进行测试来控制的。提出了静态和动态模式的两种测试方法来测量时序差异,然后用于指定建立时间和保持时间。静态模式主要用于检测时序规范是否通过,动态模式设计用于测量时序不匹配的数量,从而检测由于时序延迟不匹配而导致的时序裕量降低。使用这两种测试模式,BIST方案可通过低频信号获得测试结果,这些信号可与低性能测试仪兼容。包含BIST方案的测试芯片已采用商用0.18-μmCMOS工艺制造。显示了芯片测量结果,以验证BIST方案对于存储设备的建立和保持时间的可测试性。

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