Relocation dynamics and multistable switching in semiconductor superlattices

摘要

A numerical study of electric field domain relocation during slow voltage switching is presented for a spatially discrete model of doped semiconductor superlattices. The model is derived from the Poisson's equation and the charge continuity equation. It consists of an Ampere equation for the current density and a global summatory condition for the electric field and it has been particularly effective in the prediction and reproduction of experimental results. We have designed a fast numerical scheme based on the use of an explicit expression for the current density. The scheme reproduces both previous numerical and experimental results with high accuracy, yielding new explanations of already known behaviors and new features that we present here. (C) 2006 Elsevier B.V. All rights reserved.