首页> 外文期刊>Journal of chemical theory and computation: JCTC >Electronic Structure and Reactivity of Boron Nitride Nanoribbons with Stone-Wales Defects
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Electronic Structure and Reactivity of Boron Nitride Nanoribbons with Stone-Wales Defects

机译:具有石质缺陷的氮化硼纳米带的电子结构和反应性

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摘要

Gradient-corrected density functional theory (DFT) computations were performed to investigate the geometry, electronic property, formation energy, and reactivity of Stone-Wales (SW) defects in zigzag-edge and armchair-edge boron nitride nanoribbons (BNNRs). The formation energies of SW defects increase with an increase in the widths of BNNRs and are orientation-dependent. SW defects considerably reduce the band gaps of BNNRs independent of the defect orientations. In addition, the local chemical reactivity of SW defects and edge sites in zigzag-edge and armchair-edge BNNRs was probed with the CH2 cycloaddition reaction. Independent of the nanoribbon types and the SW defect orientations, the reactions at SW defect sites are more exothermic than those at the center of perfect BNNRs, and the newly formed B-B and N-N bonds are the most reactive sites, followed by the 5-7 ring fusions.
机译:进行了梯度校正的密度泛函理论(DFT)计算,以研究锯齿状边缘和扶手椅状边缘氮化硼纳米带(BNNRs)中Stone-Wales(SW)缺陷的几何形状,电子性质,形成能和反应性。 SW缺陷的形成能随着BNNR宽度的增加而增加,并且与取向有关。 SW缺陷大大减小了BNNR的带隙,而与缺陷方向无关。另外,用CH 2环加成反应探测了锯齿形边缘和扶手椅边缘BNNR中SW缺陷和边缘部位的局部化学反应性。与纳米带的类型和SW缺陷取向无关,SW缺陷位点的反应比完全BNNRs中心的反应放热得多,新形成的BB和NN键是反应性最高的位点,其次是5-7环融合。

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