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Surface modification of poly(biphenyl dianhydride-para-phenylene diamine) (BPDA-PDA) polyimide by UV photo-oxidation

机译:紫外光氧化法对聚(联苯二酐-对苯二胺)(BPDA-PDA)聚酰亚胺进行表面改性

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Poly(biphenyl dianhydride-para-phenylene diamine) (BPDA-PDA,Upilex-S) polyimide (PI),was exposed to 185 and 254 nm UV radiation in the presence of oxygen at atmospheric pressure.SEM micrographs revealed only a small change in surface morphology following treatment.XPS showed an approximate doubling of the O/C ratio on the modified surfaces which appeared mostly as the carbonyl moiety.UV photo-oxidation degraded Upilex-S to produce a locus of failure below the interface (cohesive failure).XPS and TOF-SIMS results indicated that the Upilex-S thickness remaining on sputtered Cu after the tape test on the Cu-modified surface was<= 10 nm.Cohesive failure occurred at shorter treatment times when Cu was sputter coated on modified BPDA-PDA than on poly(pyromellitic dianhydide-oxydianiline) (PMDA-ODA) PI.
机译:聚(联苯二酐-对苯二胺)(BPDA-PDA,Upilex-S)聚酰亚胺(PI)在大气压下在氧气存在下暴露于185和254 nm的紫外线辐射下。处理后的表面形态XPS显示改性表面的O / C比大约翻倍,主要表现为羰基部分.UV光氧化降解了Upilex-S,从而在界面以下产生破坏的位置(内聚破坏)。 XPS和TOF-SIMS结果表明,在铜改性表面上进行胶带测试后,保留在溅射铜上的Upilex-S厚度<= 10 nm。比聚(1,2,5-苯四酸二酐-氧化二苯胺)(PMDA-ODA)PI上的浓度高。

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