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首页> 外文期刊>Journal of Applied Electrochemistry >Electrodeposition of CuNiW alloys: Thin films, nanostructured multilayers and nanowires
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Electrodeposition of CuNiW alloys: Thin films, nanostructured multilayers and nanowires

机译:CuNiW合金的电沉积:薄膜,纳米结构多层和纳米线

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摘要

Electrodeposition operating conditions were determined for the deposition of copper-nickel-tungsten alloys and compositionally, multilayered deposits. Multilayered alloys with one layer rich in Cu and the other layer rich in NiW were fabricated as both thin films and nanowires. The electrolyte contained 0.6 M Na_3C6H_5O_7, 0.2 M Na_2WO _4, 0.3 M NiSO_4 and variable CuSO_4 concentration at a pH of 8 adjusted with ammonium hydroxide at 70 ± 2 °C. The deposit composition and current efficiency were characterized using rotating cylinder electrodes with and without a Hull configuration. Addition of Cu(II) to the electrolyte lowered the tungsten partial current density and hence the W wt% in the deposit. Thin film multilayered alloys, with a modulation in composition, were fabricated with pulse current deposition and conditions to selectively etch one layer was determined with a view towards fabricating nanotemplates. Nanowires with modulated composition were also demonstrated, electrodeposited into alumina nanoporous templates. However, the nanowire deposition was confounded by the formation of oxide during the modulation, and results herein recommend that the potential of the more noble step be more negative than-0.9 V versus SCE to avoid this situation, despite metallic alloy formation in unrecessed electrodes.
机译:确定电沉积操作条件,以沉积铜-镍-钨合金和组成多层的沉积物。将一层富含铜而另一层富含NiW的多层合金制成薄膜和纳米线。电解质包含0.6 M Na_3C6H_5O_7、0.2 M Na_2WO_4、0.3 M NiSO_4和在70±2°C下用氢氧化铵调节的pH为8的可变CuSO_4浓度。使用具有和不具有赫尔构造的旋转圆柱电极来表征沉积物组成和电流效率。向电解液中添加Cu(II)降低了钨的部分电流密度,从而降低了沉积物中的W wt%。通过脉冲电流沉积来制造具有组成调制的薄膜多层合金,并且出于制造纳米模板的目的,确定了选择性蚀刻一层的条件。还展示了具有调节成分的纳米线,将其电沉积到氧化铝纳米多孔模板中。然而,纳米线沉积被调制过程中氧化物的形成所迷惑,并且本文的结果建议,尽管在未凹陷的电极中形成了金属合金,但较贵的步骤的电势相对于SCE的负电性要比SCE高-0.9V。

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