首页> 外文期刊>Journal of Applied Electrochemistry >Electrochemical surface modification of aluminium sheets for application to nano-electronic devices: Anodization aluminium and electrodeposition of cobalt-copper
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Electrochemical surface modification of aluminium sheets for application to nano-electronic devices: Anodization aluminium and electrodeposition of cobalt-copper

机译:用于纳米电子器件的铝板的电化学表面改性:阳极氧化铝和钴铜的电沉积

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摘要

A nano-porous anodized aluminium oxide layer was synthesized on the surface of bulk aluminium at a wide range of anodization voltages. The barrier layer at the pore bottom of anodized aluminium oxide layer was chemically etched to make good electrical contact for nanowires electrodeposited in the pores thus formed on metallic aluminium substrates. Cathodic polarization was examined at a wide range of cathode potentials to investigate the electrodeposition behaviour of Cu and Co into the pores. Co81Cu19/Cu multilayered nanowires were fabricated using a pulse-plating technique into the templates. Co-alloy layer and Cu layer thicknesses were adjusted to 10 nm, by controlling the deposition times. The temperature dependence of the resistance of Co81Cu19/Cu multilayered nanowires grown on the template presented clean metallic characteristics and a giant magnetoresistance (GMR) of 23% was reached at 4 K.
机译:在大范围的阳极氧化电压下,在块状铝的表面上合成了纳米多孔阳极氧化铝层。化学蚀刻阳极氧化铝层的孔底部的阻挡层,以使电沉积在金属铝基板上形成的孔中的纳米线形成良好的电接触。在广泛的阴极电势下检查阴极极化,以研究Cu和Co在孔中的电沉积行为。使用脉冲电镀技术将Co81Cu19 / Cu多层纳米线制成模板。通过控制沉积时间,将共合金层和Cu层的厚度调节至10nm。在模板上生长的Co81Cu19 / Cu多层纳米线的电阻的温度依赖性呈现出纯净的金属特性,在4 K时达到23%的巨磁阻(GMR)。

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