A Novel Structure for High Voltage High Power Multilayer RF PIN Diode with an Improved Bandwidth and Sharp Variable Junction Capacitance

摘要

The PIN diode is a semiconductor device that can, for its especial properties, be used to switch high level power and frequencies currents. The main aim of this paper is to introduce, investigate and explore a new structure for high voltage, high frequency and high power multilayer pin diode with an improved cut-off frequency that also has high sensitive variable junction capacitance versus changes in input bias voltage. To design, simulate and analyze the novel structure in the range of 1 GHz to 31 GHz, Silvaco Atlas software is used. The results show that in 1GHz frequency, junction capacitance value shows a considerable increase of about 2.875e-17 F/μm in a bias range of -10V to 10V that 80 percent of this increase occurs in of range of 0-2 V which is very considerable. For the 31-GHz frequency also, junction capacitance value shows an increase of about 1.625e-17 F/μm by applying the same range of input bias voltage, exhibiting an acceptable increase given the high frequency used. In frequencies between 1GHz to 31 GHz also, there is a considerable increase rate for junction capacitance value relative to the same range of bias voltage. Usage of this novel structure in frequency-down converters (e.g. mixers) is one of its practical implications. After estimating the equivalent circuit for novel structure, considering a diode's frequency response, its cut-off frequency was calculated to be 8.8 MHz.