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首页> 外文期刊>Journal of active and passive electronic devices >Design of High Performance and Low Leakage Voltage Controlled Oscillator Using MTCMOS Technique
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Design of High Performance and Low Leakage Voltage Controlled Oscillator Using MTCMOS Technique

机译:利用MTCMOS技术设计高性能,低泄漏电压控制振荡器

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The continuously scale down of technology, leakage current is growing exponentially. Ultra low power applications have acquired a lot of attention in recent years. Energy-efficient designs have become more and more important for hardware with the growing use of portable devices. This is due to the increment in battery operated devices and also become to the scaling of CMOS devices. In this paper presents simple VCO and technique based VCO have been designed and parameters like total power, leakage power and current has been calculated. The voltage controlled oscillator (VCO) is the core factor of phase locked loop (PLL) oscillation frequency synthesis, which is mostly used in modern electronic information processing systems. MTCMOS (Multi Threshold CMOS) technique is applied in this paper currently it is very prominent in academia and industry. MTCMOS is an effective circuit level technique that accumulate a high performance and low power design by utilizing both low and high-threshold voltage transistors. It is one of the most used circuit technique to reduce leakage power and current in idle circuit. Designing and calculation of parameters of simple VCO and MTCMOS based VCO has been done with cadence virtuoso tool has improved result of leakage power is 9.52nw and that was done at 45nm technology with operating voltage of 0.7volt. Simulation result shows that the power gating MTCMOS technique has the least power dissipation as compared to other circuit.
机译:随着技术的不断缩小,泄漏电流呈指数增长。近年来,超低功耗应用引起了很多关注。随着便携式设备的日益普及,节能设计对于硬件变得越来越重要。这是由于电池供电设备的增加,也取决于CMOS设备的规模。在本文中,我们介绍了简单的VCO和基于VCO的技术,并设计了诸如总功率,泄漏功率和电流之类的参数。压控振荡器(VCO)是锁相环(PLL)振荡频率合成的核心因素,其主要用于现代电子信息处理系统中。本文采用了MTCMOS(Multi Threshold CMOS)技术,目前在学术界和工业界非常重要。 MTCMOS是一种有效的电路级技术,可通过同时利用低阈值电压晶体管和高阈值电压晶体管来积累高性能和低功耗设计。减少空闲电路中的泄漏功率和电流是最常用的电路技术之一。使用cadence virtuoso工具完成了简单VCO和基于MTCMOS的VCO的参数设计和计算,改善了泄漏功率为9.52nw的结果,该结果是在45nm工艺下以0.7V的工作电压完成的。仿真结果表明,与其他电路相比,功率门控MTCMOS技术的功耗最低。

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