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首页> 外文期刊>Journal de Physique, IV: Proceedings of International Conference >Scale up of a single source MOCVD system for deposition of YBCO onto travelling tapes
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Scale up of a single source MOCVD system for deposition of YBCO onto travelling tapes

机译:扩大用于将YBCO沉积到行进磁带上的单源MOCVD系统

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摘要

MOCVD is a promising economic method for the production of YBCO tapes. An enlarged single source MOCVD-system for continuous deposition of YBCO on metal tapes was developed. Computer simulations with FLUENT code were used for the design of the new tape system, which is based on a former small tape system. The calculated temperature distribution, precursor mole fractions and gas flows lead to a better understanding of the important aspects of the design. In this new system single crystals, IBAD buffered tapes and buffered textured Ni-tapes were transported through the deposition zone and coated with YBCO. On Single crystals, IBAD buffered substrates and textured Ni the best critical current densities at 77 K of the 300-500 nm thick YBCO films were 4.8 MA/cm~2, 2.5 MA/cm~2 and 0.25 MA/cm~2 respectively. The velocity for the tape transport was 4 m/h for these substrates. The XRD-measurements of the YBCO-film on single crystalline LaAlO_3 showed only c-axis orientation with FWHM(005) = 0.10 ° for the rocking curve and with FWHM(102) = 0.7 ° for the phi scan.
机译:MOCVD是生产YBCO胶带的一种有前途的经济方法。开发了用于在金属带上连续沉积YBCO的扩大的单源MOCVD系统。具有FLUENT代码的计算机模拟被用于设计新的磁带系统,该系统基于以前的小型磁带系统。计算出的温度分布,前驱物摩尔分数和气流有助于更好地了解设计的重要方面。在这个新系统中,IBAD缓冲带和缓冲织构镍带被输送通过沉积区并涂有YBCO。在单晶,IBAD缓冲衬底和织构Ni上,300-500 nm厚的YBCO薄膜在77 K时的最佳临界电流密度分别为4.8 MA / cm〜2、2.5 MA / cm〜2和0.25 MA / cm〜2。对于这些基板,胶带传送的速度为4m / h。 XB测量的单晶LaAlO_3上的YBCO膜在摇摆曲线上仅显示c轴方向,FWHM(005)= 0.10°,而phi扫描显示FWHM(102)= 0.7°。

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