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Synthesis of patterned carbon nanotube arrays for field emission using a two layer Sn/Ni catalyst in an ethanol flame

机译:在乙醇火焰中使用两层Sn / Ni催化剂合成用于场发射的图案化碳纳米管阵列

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摘要

Patterned carbon nanotube (CNT) arrays on Si substrate have been fabricated by using a two layer Sn/Ni catalyst in a diffusion ethanol flame. Vertically well-aligned CNT arrays were achieved on a Si substrate without any catalyst pretreatment. The Sn underlayer activated the substrates for CNT growth with Ni as catalyst, and provided a good contact between CNTs and the substrate, which is useful for field emission. Since the adhesion of Sn/Ni nanoparticles to the substrate is very strong, the growth of the CNTs follows a base-growth mode. The thickness of the Sn underlayer largely determines the diameter and diameter distribution of the as-grown CNTs. The morphologies and field electron emission properties of CNT arrays grown on Si substrates with different thicknesses of Sn and growth times have been investigated. The variation of emission current density was less than 5 percent during a 4 h test under a field of 1.77 V/μm.
机译:通过在扩散乙醇火焰中使用两层Sn / Ni催化剂,在Si基板上制作了图案化的碳纳米管(CNT)阵列。在没有任何催化剂预处理的情况下,在Si基板上实现了垂直方向排列良好的CNT阵列。 Sn底层利用Ni作为催化剂活化了用于CNT生长的衬底,并且在CNT与衬底之间提供了良好的接触,这对于场发射是有用的。由于Sn / Ni纳米颗粒对基材的粘附力非常强,因此CNT的生长遵循基本生长模式。 Sn底层的厚度在很大程度上决定了所生长的CNT的直径和直径分布。研究了在具有不同Sn厚度和生长时间的Si衬底上生长的CNT阵列的形貌和场电子发射特性。在1.77 V /μm的电场下进行4 h测试期间,发射电流密度的变化小于5%。

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