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Duplex DLC coatings fabricated on the inner surface of a tube using plasma immersion ion implantation and deposition

机译:使用等离子浸入离子注入和沉积法在管子内表面上制成双相DLC涂层

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摘要

A duplex plasma immersion ion implantation and deposition (PIIID) process, involving carbon ion implantation and diamond-like carbon (DLC) deposition, is proposed to modify the inner surface of a tube. In the research, samples of GCr15 bearing steel were placed inside a tube in the vacuum chamber. After the vacuum chamber was evacuated to a base pressure of 6 X 10~(-3) Pa, C_2H_2 gas was introduced into the chamber, and the tube was biased by a negative pulsed bias. Since a pulsed glow discharge (PGD) plasma can be formed by the bias, carbon ion implantation and DLC film deposition process can be obtained by biasing the tube with a high and low bias, respectively. To synthesize different DLC films, single PIIID processes employing a low voltage (several kV) PGD method and duplex PIIID processes combining the high (several tens kV) and low voltage PGD techniques were carried out. The as-synthesized films were characterized by Raman spectrum, nano-indentation, scratch, tribological and electrochemical tests. Raman results show that duplex DLC films were synthesized by this duplex PIIID process. In addition, compared with the single DLC film synthesized by the low voltage PGD process, the duplex DLC films can obtain a high wear and corrosion resistances. Furthermore, using this duplex PIIID method, batch treatment of outer-rings of the bearing was realized.
机译:提出了一种涉及碳离子注入和类金刚石碳(DLC)沉积的双工等离子体浸没离子注入和沉积(PIIID)工艺,以修饰管的内表面。在研究中,将GCr15轴承钢样品放置在真空室内的管内。将真空室抽空至6 X 10〜(-3)Pa的基本压力后,将C_2H_2气体引入真空室,并通过负脉冲偏压对管进行偏压。由于可以通过偏压形成脉冲辉光放电(PGD)等离子体,因此可以通过分别以高偏压和低偏压对管进行偏压来获得碳离子注入和DLC膜沉积工艺。为了合成不同的DLC膜,进行了使用低压(几千伏)PGD方法的单个PIIID工艺和结合了高压(几十kV)和低压PGD技术的双工PIIID工艺。合成后的薄膜通过拉曼光谱,纳米压痕,划痕,摩擦学和电化学测试进行表征。拉曼实验结果表明,双相DLC薄膜是通过这种双相PIIID工艺合成的。另外,与通过低压PGD工艺合成的单层DLC膜相比,双层DLC膜可以获得高耐磨性和耐腐蚀性。此外,使用这种双工PIIID方法,可以实现轴承外圈的批量处理。

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