High-quality diamond film deposition on a titanium substrate using the hot-filament chemical vapor deposition method

摘要

Diamond film on titanium substrate has become extremely attractive because of the combined properties of these two unique materials. Diamond film can effectively improve the properties of Ti for applications as aerospace and biomedical materials, as well as electrodes. This study focuses on the effects of process parameters, including gas composition, substrate temperature, gas flow rate and reactor pressure on diamond growth on Ti substrates using the hot-filament chemical vapor deposition (HFCVD) method. The nucleation density, nuclei size as well as the diamond purity and growth tendency indices were used to quantify these effects. The crystal morphology of the material was examined with scanning electron microscopy (SEM). Micro-Raman spectroscopy provided information on the quality of the diamond films. The growth tendency of TiC and diamond film was determined by X-ray diffraction analysis. The optimal conditions were found to be: CH_4:H_2 = 1 percent, gas flow rate = 300 sccm, substrate temperature T_(sub) = 750 deg C, reaction pressure = 40 mbar. Under these conditions, high-quality diamond film was deposited on Ti with a growth rate of 0.4 mu m/h and sp~2 carbon impurity content of 1.6 percent.