Mapping of extended defects in B-doped (001) homoepitaxial diamond films by electron-beam-induced current (EBIC) and cathodoluminescence (CL) combination technique

摘要

We have studied on a spatial distribution of extended defects with shell-shape pits in B-doped (001) homoepitaxial diamond films using electron-beam-induced current (EBIC) and cathodoluminescence (CL) combination technique. The EBIC image corresponded to the comprehensive one of band-A emission (430 nm) in CL measurements. In addition, both EBIC and CL images also corresponded to optical microscope image (Nomarski) with shell-shape pits. These experimental results' indicate that the shell-shape pits are accompanied with localized electrically-active-defects originating from extended defects such as dislocation with band-A CL emission. It is suggested that extended defects such as dislocations result in the formation of shell-shape pits.