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Optimization of wear-corrosion properties of a-C:N films using filtered cathodic arc deposition

机译:使用过滤的阴极电弧沉积优化a-C:N膜的耐磨蚀性能

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Applying a 4-factor (negative substrate bias voltage, arc current, Ar flow and N_2/Ar ratio) 3-level (L9) orthogonal array design using the Taguchi method to optimize the wear-corrosion properties of a-C:N in Filtered Cathodic Vacuum Arc (FCVA) deposition was investigated. The influence of N_2/Ar ratio, over the range of 1/6 to 2/3, is shown by the increase in the following: the wear-corrosion current density changes from 36 to 78 nA/cm~2, and the friction coefficient changes from 0.042 to 0.086. A higher N_2/Ar ratio induces the a-C:N firm's structure to reduce the sp~3 content (sp~2 rich) which implies the formation of loose networks due to N_2 incorporation. Based on the analysis, the N_2/Ar ratio is the most significant control factor as its percentage contribution is 69 percent for wear-corrosion current density and 32 percent for frictional coefficient, respectively. There is a tendency for a higher friction coefficient by increasing the following three factors; level of negative substrate bias voltage, Ar flow and N_2/Ar ratio. We observed an increase of N content and sp2 bonding which correlated to the decrease of hardness and an also rougher a-C:N surface with increasing the factors level. Over the design range of 4 factors, the optimum wear-corrosion properties and friction coefficient obtained from the Taguchi analysis were obtained using a 20 V negative substrate bias, 30 A arc current, 30 sccm Ar flow and 1/6 N_2/Ar ratio respectively. Overall, the results show an optimum design when compared with the current design as it was able to reduce 84 percent of the wear-corrosion current density (35.7 down to 5.6 nA/cm~2) and 58 percent of the frictional coefficient (0.060 down to 0.025), respectively.
机译:使用Taguchi方法应用4因子(负衬底偏置电压,电弧电流,Ar流量和N_2 / Ar比)3级(L9)正交阵列设计,以优化过滤阴极真空中aC:N的磨损腐蚀性能研究了电弧(FCVA)沉积。 N_2 / Ar比在1/6至2/3范围内的影响表现为:腐蚀电流密度从36 nA / cm〜2变化,摩擦系数变化从0.042更改为0.086。较高的N_2 / Ar比会诱导a-C:N公司的结构减少sp〜3含量(富含sp〜2),这意味着由于N_2的引入而形成了松散的网络。根据分析,N_2 / Ar比是最重要的控制因素,因为它对磨损电流密度的贡献百分比为69%,对于摩擦系数的贡献百分比为32%。通过增加以下三个因素,摩擦系数有增加的趋势。衬底负偏压的水平,Ar流量和N_2 / Ar比。我们观察到N含量和sp2键的增加与硬度的降低相关,并且随着因子水平的提高,a-C:N表面也更粗糙。在4个因素的设计范围内,分别使用20 V负基板偏压,30 A电弧电流,30 sccm Ar流量和1/6 N_2 / Ar比分别获得了由Taguchi分析获得的最佳磨损性能和摩擦系数。 。总体而言,与现有设计相比,结果表明该设计是最佳的,因为它可以降低84%的磨损电流密度(35.7降至5.6 nA / cm〜2)和58%的摩擦系数(0.060降低)。至0.025)。

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