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Free-exciton luminescence spectrum broadening due to excitonic complex in diamond

机译:金刚石中的激子复合物使自由激子发光光谱变宽

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The excitation density evolution of a band-edge luminescence spectrum of diamond in the photon energy region 5.14 to 5.40 eV was investigated at 190, 240 and 290 K with the fifth harmonic (5.82 eV) of a pulsed YAG laser in the excitation density range 2.2 to 272 mJ/cm~2. A broadening of a free-exciton luminescence (FE) spectrum with the peak energy (E_(peak)) of 5.28 eV due to the growth of the low-energy tail was observed with increasing excitation density. From a detailed spectrum analysis, it is found that the broadening originates in excitonic complex (EC) luminescence (E_(peak)=5.26 eV) in addition to electron-hole plasma (EHP) luminescence (E_(peak) = 5.23 eV). The EC luminescence intensity was observed to be proportional to the 1.5 power of the FE luminescence intensity, which is the same manner as in the case of the EC luminescence in crystalline silicon. The excitation density dependence of the EHP luminescence intensity is discussed with percolation theory.
机译:在190、240和290 K上研究了脉冲YAG激光器的五次谐波(5.82 eV)在光子能量区域5.14至5.40 eV下金刚石的带边发光光谱的激发密度演化。至272 mJ / cm〜2。随着激发密度的增加,观察到由于低能尾巴的生长,峰值能量(E_(peak))为5.28 eV的自由激子发光(FE)光谱变宽。通过详细的光谱分析,发现加宽起因于电子空穴等离子体(EHP)发光(E_(peak)= 5.23 eV)之外的激子复合体(EC)发光(E_(peak)= 5.26 eV)。观察到EC发光强度与FE发光强度的1.5次方成正比,这与在结晶硅中的EC发光的情况相同。利用渗流理论讨论了EHP发光强度的激发密度依赖性。

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