首页> 外文期刊>Diamond and Related Materials >Spatial distribution of electron emission sites for sulfur doped and intrinsic nanocrystalline diamond films
【24h】

Spatial distribution of electron emission sites for sulfur doped and intrinsic nanocrystalline diamond films

机译:硫掺杂和本征纳米晶金刚石薄膜电子发射部位的空间分布

获取原文
获取原文并翻译 | 示例
           

摘要

We have investigated high sp~2 content intrinsic and sulfur doped nanocrystalline diamond films to study field emission properties by electron emission microscopy operated in different modes. Electron emission microscopy enables real time imaging of the electron emission from a surface with a lateral resolution of approx 15 nm. The nanocrystalline intrinsic diamond films exhibit electron emission at room temperature from localized emission sites with weak temperature dependence, and a density of approx 10~3-10~4/cm~2. In contrast, sulfur doped diamond films show similar emission characteristics at room temperature, but at elevated temperatures the emission significantly increases from the localized regions and a thermionic component is identified in the I/V dependence. We discuss the role of S-donor states to explain the enhanced emission of the S-doped nanocrystalline diamond.
机译:我们已经研究了高sp〜2含量的本征和硫掺杂的纳米晶金刚石薄膜,以通过在不同模式下运行的电子发射显微镜研究场发射特性。电子发射显微镜可以实时成像从表面以约15 nm的横向分辨率发射电子。纳米晶本征金刚石薄膜在室温下具有弱的温度依赖性,可以从局部发射点发射电子,其密度约为10〜3-10〜4 / cm〜2。相反,掺杂硫的金刚石膜在室温下显示出相似的发射特性,但是在高温下,发射从局部区域显着增加,并且在I / V依赖性中鉴定出热电子成分。我们讨论了S供体态的作用,以解释S掺杂的纳米晶金刚石的增强发射。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号