PHOSPHORUS-DOPED DIAMOND FILM ALLOWING SIGNIFICANTLY REDUCED ELECTRON EMISSION VOLTAGE, METHOD FOR PRODUCING THE SAME, AND ELECTRON SOURCE USING THE SAME

摘要

According to the present invention, a phosphorus-doped diamond film allowing a significantly reduced electron emission voltage, a method for producing the same, and a diamond electron source using the same, such diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage, are provided. Also, a method for producing a phosphorus-doped diamond film, comprising growing a diamond film on a diamond substrate by a microwave CVD method in an atmosphere containing gases (methane and hydrogen) and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorous, such diamond film containing phosphorus at a concentration of 10¹⁵ cm⁻³ or more, having a resistivity of 10⁷ Ωcm or less, and allowing a voltage for initiation of electron emission to be 30 V or less, and a diamond electron source using the same are provided. In such diamond film, the electron emission voltage is significantly reduced.