Characterization of diamond films deposited with a 915-MHz scaled-up surface-wave-sustained plasma

摘要

The operating frequency of a microwave plasma system designed for polycrystalline diamond filmdeposition is lowered from 2450 to 915 MHz to allow for larger diameter substrate processing. Thesubstrate diameter is limited to 80 mm by the size of the cathode heater utilized as susceptor; 76-mm(3-inch) Si(100) wafers have actually been processed. Good-quality diamond films are obtained overthe whole substrate surface with a thickness uniformity of±10%. The plasma of these systems issustained by an electromagnetic surface wave and adjusted for uniform coverage of the substrate. Wecompare the characteristics of these discharges at 915 and 2450 MHz and their correspondingdiamond films.