n-type conductivity of phosphorus-doped homoepitaxial single crystal diamond on (001) substrate

摘要

The macroscopic surface morphology and crystallinity of (001) n-type diamond films, which have been quite recently achieved by P-doping using plasma-enhanced chemical vapor deposition technique, were studied. The observation of diffraction spots, streaks, and Kikuchi patterns in reflection high energy electron diffraction analysis indicated that the surface smoothness and the crystallinity were fine. Regarding the electrical properties of (001) n-type diamond films, Hall-effect measurements over a wide temperature range from 260 to 1000 K were investigated. The conduction band transport without the effect of hopping transport was confirmed within this experimental temperature range.