Preferential orientation of NV defects in CVD diamond films grown on (113)-oriented substrates

摘要

Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15-50 mu m/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Electron spin resonance measurements were carried out to determine NV centers orientation and concluded that one :specific orientation has an occurrence probability of 73% when (100)-grown layers show an equal distribution in the 4 possible directions. A spin coherence time of around 270 mu s was measured which is equivalent to that reported for material with similar isotopic purity. Although a higher degree of preferential orientation was achieved With (111)-grown layers (almost 100%), the ease of growth and post-processing of the (113) orientation make it a potentially useful material for magnetometry or other quantum mechanical applications. (C) 2015 Elsevier B.V. All rights reserved.