The radiation hardness properties of #gamma#-ray for SOD circuits fabricated on 4-inch SOD wafer

摘要

A silicon-on-diamond (SOD) structure wafer with 4-inch diameter was fabricate. First, a high quality and low interface state density diamond thinfilm was uniformly deposited on 4-inch Silicon (001) wafer. Second, continuous H~+ ion bombardment to as-grown film surface under DC bias was performed to decrease the intrinsic tensile stress in the film. Then, bonding technology of Si wafers was applied for forming the hold of SOD structured wafer. Finally, after the single crystal silicon wafer under diamond film was thinned by a machine method and polished by using chemical and ion beam methods, an active SOD wafer with a 0.4-1-#mu#m Si layer was formed. The SOD circuits fabricated on SOD wafer presents very obvious ability of radiation hardness to #gamma#-ray total and instantaneous doses than those of bulk Si circuits.