From #PSI#-MOSFET with silicon on oxide to #PSI#-MOSFET with silicon carbide on nitride

摘要

The #PSI#-MOSFET is a device used in SOI electrical characterization. The aim of this paper was to establish a comparison between these transistors made in four variants: (1) with silicon film on buried oxid; (2) with silicon carbide film on buried oxide; (3) with silicon film on buried nitrid; and (4) with silicon carbide film on buried nitride. ATLAS software simulated these structures. Besides this virtual experiments, a more complex model for the flat-band voltage is provided.