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Understanding the chemistry of low temperature diamond growth; an investigation into the interaction of chlorine and atomic hydrogen at CVD diamond surfaces

机译:了解低温钻石生长的化学过程; CVD金刚石表面上氯与原子氢相互作用的研究

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摘要

The interaction of chlorine with CVD diamond surfaces has been studied using Auger and photoelectron spectroscopy techniques, with reference to the development of low temperature growth models for diamond using halogen-based precursors. Chlorine is found to adsorb on the clean CVD surface with a sticking probability of ~0.001 at 300 K, although this can be enhanced by prehydrogenation of the surface and by raising the substrate temperature. Adsorbed chlorine desorbs from the surface over a wide temperature range below 500℃, and is also very efficiently etched away by atomic hydrogen. Chlorine has therefore little tendency to poison the growth surface, and thus is capable of acting as a catalyst for low temperature growth.
机译:已使用俄歇和光电子能谱技术研究了氯与CVD金刚石表面的相互作用,并参考了使用卤素基前体的金刚石低温生长模型的开发。尽管在表面进行预加氢处理并提高基板温度,氯仍会在300 K下吸附在干净的CVD表面上,但粘附可能性约为0.001。在低于500℃的宽温度范围内,吸附的氯会从表面脱附,并且还非常有效地被氢原子腐蚀掉。因此,氯几乎没有中毒生长表面的趋势,因此能够充当低温生长的催化剂。

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