Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by r.f. plasma-enhanced CVD using trimethylboron

摘要

An attempts has been made on the device fabrication with boron-doped hydrogenated amorphous carbon (a-C:H) thin film deposited on n-type Si (100) by r.f. plasma-enhanced CVD. In order to identify the optimal doping condition, the various CH_4 partial pressure has been examined. a-C:H-Si heterojunction solar cells with a conversion efficiency as high as 0.04% have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film. The photovoltaic properties of the a-C:H based heterojunction solar cell structures are discussed with the drak and illuminated J-V as well as optical properties of boron-doped a-C:H film.