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Secondary electron emission measurements on synthetic diamond films

机译:合成金刚石薄膜的二次电子发射测量

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During the electron irradiation of synthetic diamond films, three successive regimes are encountered as a function of the electron dose: (1) a reduction of the downward band bending of energy levels at the sample surface because an excess ofsecondary electrons leaves the sample; (2) the creation of an internal electric field in which secondary electrons drift to the surface, leading to an appreciable increase in the secondary emission and to a linear relation between the primary electronenergy and the secondary electron yield; and (3) the desorption of hydrogen terminating the carbon surface bonds. The secondary emission thus decreases to very low values. The rate of decrease of secondary emission is similar for C:H- andC:H:Ba-terminated diamond surfaces.
机译:在合成金刚石薄膜的电子辐照过程中,会遇到三个连续的过程,这是电子剂量的函数:(1)由于过量的二次电子离开样品,减少了样品表面能级的向下能带弯曲; (2)产生内部电场,其中二次电子漂移到表面,导致二次发射明显增加,并且导致一次电子能量与二次电子产率之间呈线性关系; (3)氢的解吸终止了碳的表面键。因此,二次发射降低到非常低的值。对于C:H-和C:H:Ba端接的金刚石表面,二次发射的减少速率相似。

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