Effect of total reaction pressure on electrical properties of boron doped homoepitaxial (100) diamond films formed by microwave plasma-assisted chemical vapor deposition using trimethylboron

摘要

Boron was doped into diamond films which were synthesized homoepitaxially on polished (100) diamond substrates by means of microwave plasma-assisted chemical vapor deposition (MPCVD) using trimethylboron as the dopant at a constant substratetemperature of 1073 K. The morphologies and electrical properties of the synthesized diamond films were dependent on the total reaction pressure. A maximum Hall mobility, 760 cm{sup}2 V{sup}-1 s{sup}-1, was obtained for the film synthesized at 10.7 kPa.The values of Hall mobility were comparable with those obtained for B{sub}2H{sub}6-doped films at corresponding hole concentrations.