Diamond bipolar junction transistor device with phosphorus-doped diamond base layer

摘要

Current amplification at room temperature has been achieved in diamond bipolar junction transistors fabricated on (111)-oriented substrate. Improved current amplification properties were achieved by utilizing optimized phosphorus-doped diamond for reducing the series resistance of the n-type base layer. Further enhancement of characteristics including operation current, blocking voltage and reproducibility is required; however, the developed diamond bipolar transistor that works at room temperature is considered to be the first step toward realizing a high-performance power device utilizing the excellent physical properties of diamond.