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Growth of vertically aligned carbon nanotubes on glass substrate at 450 deg C through the thermal chemical vapor deposition method

机译:通过热化学气相沉积法在450摄氏度下在玻璃基板上生长垂直排列的碳纳米管

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This work demonstrates the growth of vertically aligned carbon nanotubes (CNTs) on glass substrate at a low temperature of 450 deg C. The Co/Ti films prepared by the sputtering method were adopted for growing CNTs in a rapid heating and c oling chemical vapor deposition (CVD) chamber. It was found that the presence of Ti layer played an important role for catalyzing the CNT growth, and CNTs can not grow on glass substrate without Ti layer. CNTs can be synthesized at 450 deg C on glass substrates by using the bimetallic film with Ti fractions of 38 and 48 percent; on the other hand, no CNT can be obtained when Ti with a fraction of 77 percent was adopted. The results obtained in this work were compared with the predictions based on the Ti-Co binary phase diagram. Besides glass substrate, for comparison, this study also deposited the same bimetallic catalyst on Si substrate and performed the growing process at 500,600, and 700 deg C. According to the results obtained in this study, a two-step processing to prevent the catalyst from poisoning during CNT synthesis is proposed.
机译:这项工作证明了垂直取向的碳纳米管(CNTs)在450摄氏度的低温下在玻璃基板上的生长。采用溅射法制备的Co / Ti膜被用于在快速加热和冷却化学气相沉积中生长CNTs。 (CVD)室。发现Ti层的存在对于催化CNT的生长起重要作用,并且如果没有Ti层,CNT就不能在玻璃基板上生长。碳纳米管可以通过使用Ti含量分别为38%和48%的双金属膜在450摄氏度的玻璃基板上合成。另一方面,当采用分数为77%的Ti时,不能获得CNT。将这项工作中获得的结果与基于Ti-Co二元相图的预测结果进行了比较。为了比较,除玻璃衬底外,本研究还在Si衬底上沉积了相同的双金属催化剂,并在500,600和700℃下进行了生长过程。根据本研究获得的结果,分两步进行处理以防止催化剂从提出了碳纳米管合成中毒的方法。

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