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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Novel single-source precursors for the fabrication of PbTiO_3, PbZrO_3 and Pb(Zr_(1-x)Ti_x)O_3 thin-films by chemical vapor deposition
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Novel single-source precursors for the fabrication of PbTiO_3, PbZrO_3 and Pb(Zr_(1-x)Ti_x)O_3 thin-films by chemical vapor deposition

机译:通过化学气相沉积法制备PbTiO_3,PbZrO_3和Pb(Zr_(1-x)Ti_x)O_3薄膜的新型单源前驱体

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摘要

Lead titanate, lead zirconate, and lead zirconate titanate (PZT) films in the sub-μm-range were produced at temperatures around 400 °C using novel single-source precursors in a classical thermal CVD process. The design of two bimetallic alkoxide compounds, a lead titanate and a lead zirconate source with almost identical physical properties and complement miscibility, resulted in a new quasi-single-source PZT precursor, an azeotropic mixture that evaporates at 30 °C and at a pressure of 4 × 10~(-1) mbar. After thermal treatment at 650 °C, transparent (100)-oriented PZT films with remnant polarization of 20 μC cm~(-2) and a coercive field strength of 20 V μm~(-1) were achieved. An additional lead source is not required.
机译:亚微米范围内的钛酸铅,锆酸铅和锆钛酸铅(PZT)膜是在400°C左右的温度下使用新型的单源前驱物以经典的热CVD工艺生产的。具有几乎相同的物理性质和互补溶混性的两种双金属醇盐化合物(钛酸铅和锆酸铅源)的设计产生了一种新的准单源PZT前体,一种在30°C且在一定压力下蒸发的共沸混合物4×10〜(-1)毫巴在650°C热处理后,获得透明的(100)取向PZT膜,其剩余极化强度为20μCcm〜(-2),矫顽场强为20 Vμm〜(-1)。不需要额外的线索来源。

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