Effect of bias voltage on growth property of Cr-DLC film prepared by linear ion beam deposition technique

摘要

Cr-containing diamond-like carbon films were deposited on silicon wafers by a combined linear ion beam and DC magnetron sputtering. The influence of the bias voltage on the growth rate, atomic bond structure, surface topography and mechanical properties of the films were investigated by SEM, XPS, Raman spectroscopy, AFM, and nano-indentation. It was shown that the chromium concentration of the films increased with negative bias voltage and that a carbide phase was detected in the as-deposited films. The surface topography of the films evolved from a rough surface with larger hillocks reducing to form a smoother flat surface as the bias voltage increased from 0 to -200 V. The highest hardness and elastic modulus were obtained at a bias voltage of about -50 V, while the maximum sp~3 bonding fraction was acquired at -100 V. It was suggested that the mechanical properties of the films not only depended on the sp~3 bonding fraction in the films but also correlated with the influence of Cr doping and ion bombardment.