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Microstructure and electrical properties of Ag-MgF2 cermet films with high Ag content

机译:高Ag含量的Ag-MgF2金属陶瓷薄膜的微观结构和电性能

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摘要

An investigation has been made of the microstructure and the electrical properties of Ag-MgF2 cermet films, with a high Ag fraction, prepared by vacuum evaporation technique. The results show that the cermet film is composed of mainly amorphous MgF2 matrix with embedded fcc-Ag nanoparticles. The results also show that the sheet resistance of the Ag-MgF2 film varies between 200 and 2Omega/square within the composition range of 30-70wt% Ag-MgF2, that the percolation threshold occurs when Ag volume fraction reaches about 0.14, and that the TCR of the film is between 220 and 560 ppm/degreesC within the same film composition range. The positive TCR of the films with an Ag content of 30-70 wt% could be related to electrical conduction of a conducting network. (C) 2002 Elsevier Science Ltd. All rights reserved. [References: 11]
机译:已经研究了通过真空蒸发技术制备的具有高Ag含量的Ag-MgF 2金属陶瓷膜的微观结构和电学性能。结果表明,金属陶瓷薄膜主要由非晶态的MgF2基质和嵌入的fcc-Ag纳米颗粒组成。结果还表明,在30-70wt%Ag-MgF2的组成范围内,Ag-MgF2薄膜的薄层电阻在200至2Omega / square之间变化,当Ag体积分数达到约0.14时出现渗滤阈值,并且在相同的膜组成范围内,膜的TCR为220至560ppm /℃。 Ag含量为30-70wt%的薄膜的正TCR可能与导电网络的导电有关。 (C)2002 Elsevier ScienceLtd。保留所有权利。 [参考:11]

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