Improvement of the electrical properties of heteroepitaxial yttria-stabilized zirconia (YSZ) films on Si prepared by reactive sputtering

摘要

A heteroepitaxial yttria-stabilized zirconia (YSZ) film was prepared on an Si substrate by dc magnetron sputtering with Ar + O{sub}2 gas, where the metallic Zr + Y film was deposited on the weakly oxidized Si substrate prior to the YSZ film deposition. It was found from the XPS measurement that most of the weakly oxidized Si layer was reduced by depositing the Zr + Y film at a substrate temperature of 800℃ and that zirconia and yttria were formed. An unfavorable kink of the C-V characteristics of the 10-nm-thick YSZ/Si substrate structure was almost extinguished by annealing at 900℃ for 10 min in the N{sub}2 atmosphere. Also, the hysteresis loop width of the C-V curve was reduced by this annealing process.