【24h】

Compact sputtering apparatus for depositing Co-Cr alloy thin films in magnetic disks

机译:用于在磁盘上沉积Co-Cr合金薄膜的紧凑型溅射设备

获取原文
获取原文并翻译 | 示例
           

摘要

Co-Cr films deposited at excessively low Ar pressure P{sub}Ar often reveal critically poor c-axis orientation for the magnetron sputtering system. It has been found that high energy Ar atoms recoiled from the target plane would bombard heavily the growing films and degrade films' crystallographic characteristics. On the other hand, the facing targets sputtering ,(FTS) system could deposit the Co-Cr films with the excellent c-axis orientation even at P{sub}Ar as low as 0.02 Pa by optimizing thedistance between targets D{sub}t-t For example, the optimum value of D{sub}t-t was 105 mm for the targets of 100× 100 mm{sup}2 in size. The optimum conditions in FTS system were described for deposition of the Co-Cr films with the fine microstructure and the excellent c-axis orientation preferable as perpendicular recording layers, and the compact FTS apparatus of 250× 250× 200 mm{sup}3 in size was designed in this study.
机译:在极低的Ar压力P {sub} Ar下沉积的Co-Cr膜通常显示出磁控溅射系统的c轴取向非常差。已经发现,从靶平面反冲的高能Ar原子会猛烈轰击正在生长的薄膜并降低薄膜的晶体学特性。另一方面,通过优化靶材D {sub} tt之间的距离,面对靶溅射(FTS)系统即使在低至0.02 Pa的P {sub} Ar上也可以沉积具有优良c轴取向的Co-Cr膜。例如,对于尺寸为100×100mm {sup} 2的目标,D {sub} tt的最佳值为105mm。描述了在FTS系统中的最佳条件,以沉积具有优良的微观结构和极佳的c轴取向的Co-Cr膜作为垂直记录层,以及250×250×200 mm {sup} 3的紧凑型FTS设备。大小是在这项研究中设计的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号