Characteristics of surface and film morphology in the IBAD deposition process: a Monte Carlo simulation study

摘要

In this paper, we describe a simulation of film growth process during the deposition with concurrent ion beam bombardment, We examine the process of thin films formation at the atomistic level by means of Monte Carlo (MC) methods. An MC simulation model was used in order to investigate the influence of some deposition process parameters (the angle of the ion beam, temperature of substrates as well as the kinetic energy of particles and the ion-to-atom arrival ratio) on the final morphology and quality of thin films. The mechanism of the physical aspects of film growth, interaction of energetic particles with solid surfaces, internal rearrangements of deposited adatoms were introduced into the model. The simulations were performed on a simple cubic lattice by employing the Metropolis sampling algorithm. The presented model is more complicated than the previously published study. The dislocation pining effect as well the simulated shape of the substrate surface were included into the simulations. Therefore, one can estimate better the role of the process parameters on the internal structure and surface evolution of the deposited films. (C) 2003 Elsevier Science Ltd. All rights reserved. [References: 25]