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Improvement of optical and electrical properties of ITO thin films by electro-annealing

机译:通过电退火改善ITO薄膜的光电性能

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摘要

The effect of electro-annealing in vacuum and air on the optical and electrical properties of ITO thin films grown by large area DC magnetron sputtering was investigated. Moreover, the performances of the electro-annealed ITO thin films in vacuum and air were compared. Electro-annealing was performed by applying 0.75, 1.00, 1.25 and 1.50 A constant ac current to the ITO thin films. It was observed that the crystallinity of the films was better for the ITO thin films electro-annealed in vacuum. The changes in sheet resistance of electro-annealed ITO thin films with applied currents were detailed. The transmittance of the films increased for both electro-annealing in vacuum and air. A correlation between band-gap and resistivity for all of the electro-annealed thin films was observed. (C) 2015 Elsevier Ltd. All rights reserved.
机译:研究了在真空和空气中进行电退火对大面积直流磁控溅射生长的ITO薄膜的光学和电学性质的影响。此外,比较了电退火ITO薄膜在真空和空气中的性能。通过对ITO薄膜施加0.75、1.00、1.25和1.50 A恒定ac电流进行电退火。观察到,对于在真空中电退火的ITO薄膜,膜的结晶度更好。详细介绍了电退火ITO薄膜的薄层电阻随施加电流的变化。在真空和空气中进行电退火时,薄膜的透射率均增加。观察到所有电退火薄膜的带隙和电阻率之间的相关性。 (C)2015 Elsevier Ltd.保留所有权利。

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