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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Energetic ion irradiation induced crystallization of Ni-Mn-Sn ferromagnetic shape memory alloy thin film (Conference Paper)
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Energetic ion irradiation induced crystallization of Ni-Mn-Sn ferromagnetic shape memory alloy thin film (Conference Paper)

机译:Ni-Mn-Sn铁磁形状记忆合金薄膜的高能离子辐照诱导结晶(会议论文)

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摘要

The ion irradiation induced crystallization of Ni-Mn-Sn ferromagnetic shape memory alloy (FSMA) thin film is investigated. Thin films of Ni-Mn-Sn FSMA synthesized by DC magnetron sputtering on Si substrate at 200°C are irradiated by a beam of 120 MeV Ag ions at different fluence varying from 1 × 10 ~(12) to 6 × 10 ~(12) ions/cm ~2. X-ray diffraction pattern reveals that the pristine film grows in L2 _1 cubic austenite phase with poor crystallinity and crystallinity of the film improves with increasing ion fluence, which is attributed to the strain relaxation by the energy deposited by incoming ions and promotes the grain growth. Grain growth is further confirmed by Atomic force microscopy. The temperature dependent magnetization measurements show improvement in the magnetic and shape memory properties of the films with increasing fluence, which is ascribed to the ordering of austenite phase. Nanoindentation measurements show that with increasing fluence of 120 MeV Ag ions, films exhibit a greater stiffness and smaller tendency towards plastic deformation.
机译:研究了离子辐照诱导的Ni-Mn-Sn铁磁形状记忆合金(FSMA)薄膜的结晶。用直流磁控溅射在200°C的Si衬底上通过直流磁控溅射合成的Ni-Mn-Sn FSMA薄膜,以120 MeV Ag离子束辐照,其通量从1×10〜(12)到6×10〜(12离子/ cm〜2。 X射线衍射图谱表明,原始膜在L2 _1立方奥氏体相中生长,结晶度差,并且随着离子通量的增加,膜的结晶度提高,这归因于入射离子沉积的能量使应变松弛并促进晶粒生长。通过原子力显微镜进一步证实了晶粒的生长。与温度有关的磁化测量结果显示,随着通量的增加,薄膜的磁性和形状记忆性能得到改善,这归因于奥氏体相的有序性。纳米压痕测量表明,随着120 MeV Ag离子通量的增加,薄膜表现出更大的刚度和更小的塑性变形趋势。

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