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Monocrystalline-like silicon solar cells fabricated by wet and dry texturing processes for improving light-trapping effect

机译:通过湿法和干法纹理化工艺制造的单晶状硅太阳能电池,可提高光捕获效果

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摘要

Surface texturing techniques of crystalline silicon (Si) wafers are an effective and permanent method for increases in the conversion efficiency of solar cells by reducing reflection losses and improving light trapping effects compared to antireflection coatings such as hydrogenated silicon nitride (SiNx:H) thin films. In this study, monocrystalline-like Si surfaces were textured by acidic solutions followed by reactive ion etching (RIE). Also, we investigated the optical and electrical properties of Si surfaces prepared by different texturing processes. By using the acidic and RIE texturing processes for monocrystalline-like Si surfaces, we achieved open circuit voltage (V-oc), short circuit current density (J(sc)), fill factor (FF) and conversion efficiency as high as 633 mV, 36.7 mA/cm(2), 77.5% and 18%, respectively, in a solar cell with an active surface area of 156 x 156 mm(2) (243 cm(2)). Compared to the conventional acidic texturing, the acidic and RIE texturing of front Si surfaces improved the solar cell conversion efficiency of 0.9%. Therefore, the results indicate that large-area monocrystalline-like Si solar cells with high efficiency can be fabricated by standard wet chemical and additional RIE texturing processes. (C) 2015 Elsevier Ltd. All rights reserved.
机译:与减反射涂层(例如氢化氮化硅(SiNx:H)薄膜)相比,结晶硅(Si)晶片的表面纹理化技术是一种有效且永久的方法,可通过减少反射损耗和改善光捕获效果来提高太阳能电池的转换效率。在这项研究中,单晶硅表面通过酸性溶液织构,然后进行反应离子刻蚀(RIE)。此外,我们研究了通过不同纹理化工艺制备的硅表面的光学和电学性质。通过对单晶硅表面使用酸性和RIE质构化工艺,我们获得了开路电压(V-oc),短路电流密度(J(sc)),填充因子(FF)和转换效率高达633 mV分别具有156 x 156 mm(2)(243 cm(2))的有效表面积的太阳能电池中的36.7 mA / cm(2),77.5%和18%。与常规的酸性织构相比,前硅表面的酸性和RIE织构将太阳能电池的转换效率提高了0.9%。因此,结果表明,可以通过标准的湿化学法和附加的RIE制绒工艺来制造具有高效率的大面积单晶状Si太阳能电池。 (C)2015 Elsevier Ltd.保留所有权利。

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