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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >THE ANALYSIS OF THE SURFACE STRUCTURE OF AL-FILMS ANODICALLY OXIDIZED IN AN OXYGEN PLASMA
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THE ANALYSIS OF THE SURFACE STRUCTURE OF AL-FILMS ANODICALLY OXIDIZED IN AN OXYGEN PLASMA

机译:氧等离子体中阳极氧化的铝膜的表面结构分析

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摘要

The anodization of Al-films was successfully achieved in an oxygen plasma excited by a high-frequency (0.5 MHz) electromagnetic field in a quartz reactor The surface structure and chemical states of the plasma anodized Al-films have been analysed using XPS, AES, XRD and SEM. The surface structure of anodic floating oxidised Al-films produced in the high-frequency oxygen plasma is fine and close, bright and clean and the ultraviolet reflectivity is up to 93%. The optical constants (n(1)(2), k) and the surface oxide layer thicknesses (d) of the anodic floating oxidised Al-films have also been measured (n(1)(2) = 1.22-1.30; k = 6.47; d = 200 nm) by means of ellipsometry (ELL). After oxidation the columnar crystal of the Al-film's surface vanished. The structure analysis results again prove that anodic floating oxidation in an hf oxygen plasma is a way of using the oxidation technique to distinguish features. In this paper, we give structure analysis results of the bias oxidation Al-films by hf oxygen plasma, in comparison to floating oxidation by hf oxygen plasma. [References: 6]
机译:在由石英反应器中的高频(0.5 MHz)电磁场激发的氧等离子体中,成功实现了铝膜的阳极氧化。已使用XPS,AES和AES对等离子体阳极化的铝膜的表面结构和化学状态进行了分析。 XRD和SEM。高频氧等离子体中产生的阳极浮动氧化铝膜表面结构细密,光亮清洁,紫外线反射率高达93%。还测量了阳极浮动氧化Al膜的光学常数(n(1)/ n(2),k)和表面氧化物层厚度(d)(n(1)/ n(2)= 1.22- 1.30; k = 6.47; d = 200nm)。氧化后,铝膜表面的柱状晶体消失了。结构分析结果再次证明,高频氧等离子体中的阳极浮动氧化是利用氧化技术区分特征的一种方式。与高频氧等离子体的浮动氧化相比,本文给出了高频氧等离子体的偏氧化铝膜的结构分析结果。 [参考:6]

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