Advanced non-destructive diagnostics of monocrystalline silicon solar cells

摘要

Measurements of reverse-biased junctions can provide valuable information on the solar cells and their defects. A number of papers were published in the past concerning the measurement methodology, however, for devices having relatively low pn junction area only. The junction area is much larger in solar cells. Therefore, a new measurement methodology had to be developed for them. In large-area pn junctions, there are some phenomena which are negligible in the smaller-area junction measurements, but are introducing considerable errors in the measurement results of large-area junctions. The barrier capacity is one of the parameters of the solar cells under investigation. We employed the near-field and the electron microscopy to study the solar cell surface texture, which provided us with some information on the pn junction configuration.