Calibration of the Density-Gradient model by using the effective-mass Schrodinger equation

摘要

The parameters of the Density-Gradient model are calibrated by using the effective-mass Schrodinger equation. The technique presented in this article is applied to two-dimensional semiconductor devices but it is shown that it can be easily extended to three-dimensional systems. The parameters of the Density-Gradient model are determined by fitting the carrier concentrations to numerical results obtained by using the effective-mass Schrodinger equation. The semiconductor systems considered in this calibration have nanoscale dimensions that range from 3 to 15 nm.