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A Novel Low Input Impedance Low Power Fully Differential Current Buffer with ±0.65V Supply Voltage and high bandwidth of 520MHz

机译:新型低输入阻抗,低功耗,全差分电流缓冲器,电源电压为±0.65V,带宽为520MHz

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摘要

A new fully differential (FD) low input impedance CMOS current buffer with low voltage, and low power operation is presented. The low input impedance is achieved by remarkable reduction of the input node voltage swing using a novel double feedback scheme. Some advantages of the proposed double feedback scheme over the conventional (either positive or negative) feedback techniques are: lower input impedance, robustness to process tolerances and a very simple and compact design. As a fundamental building block, this current buffer can also be used to implement such current mode circuits as current conveyors, current differencing buffered amplifiers (CDBA), current mode operational amplifiers, oscillators, filters and some voltage operational amplifiers (VOA). The proposed current buffer is designed and simulated with HSPICE using TSMC 0.18μm CMOS process parameters and supply voltage of ±0.65V. The simulated input impedance is 0.44Ω which shows a reduction factor of 6250 compared to the conventional common gate structure. It exhibits excellent -3dB bandwidth of 520MHz and low power consumption of 180μW which stem from its very simple structure. The proposed current buffer also exhibits high common mode rejection ratio (CMRR) of 90dB, very high positive and negative power supply rejection ratio (PSRR+/PSRR-) of 112dB and 143dB respectively which makes it very suitable for low voltage mixed mode applications. The corner case and Monte Carlo simulation results are also provided which proves the outstanding robust performance of the proposed current buffer against technology process tolerances.
机译:提出了一种新型的具有低电压,低功耗工作的全差分(FD)低输入阻抗CMOS电流缓冲器。通过使用新颖的双反馈方案显着降低输入节点电压摆幅来实现低输入阻抗。所提出的双反馈方案相对于常规(正或负)反馈技术的一些优点是:较低的输入阻抗,对过程公差的鲁棒性以及非常简单紧凑的设计。作为基本构件,该电流缓冲器还可用于实现电流模式电路,例如电流传送器,电流差动缓冲放大器(CDBA),电流模式运算放大器,振荡器,滤波器和某些电压运算放大器(VOA)。所建议的电流缓冲器采用HSPICE设计,并采用TSMC0.18μmCMOS工艺参数和±0.65V的电源电压进行仿真。模拟的输入阻抗为0.44Ω,与传统的公共栅极结构相比,其减小系数为6250。由于其非常简单的结构,它具有出色的520MHz -3dB带宽和180μW的低功耗。提出的电流缓冲器还具有90dB的高共模抑制比(CMRR),正,负电源抑制比(PSRR + / PSRR-)分别很高,分别为112dB和143dB,这使其非常适合于低压混合模式应用。还提供了拐角情况和蒙特卡洛仿真结果,证明了所提出的电流缓冲器针对技术工艺公差的出色鲁棒性能。

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